Fairchild Semiconductor FGA50S110P View larger

Fairchild Semiconductor FGA50S110P

Fairchild Semiconductor

FGA50S110P


IGBT Transistors 1100 V, 50 A Shorted-anode IGBT

$ 5.80

109 109 Items In Stock

Specification of FGA50S110P

Manufacturer Part No. FGA50S110P
Alternate Part No. 512-FGA50S110P
Product Category IGBT Transistors
Series FGA50S110P
Packaging Tube
Maximum Gate Emitter Voltage 25 V
Maximum Operating Temperature + 175 C
Collector- Emitter Voltage VCEO Max 1100 V
Collector-Emitter Saturation Voltage 2.7 V
Package/Case TO-3PN
Minimum Operating Temperature - 55 C
Gate-Emitter Leakage Current 500 nA
Brand Fairchild Semiconductor
Mounting Style Through Hole
Manufacturer Fairchild Semiconductor
Power Dissipation 300 W
Unit Weight 6.401 g
Continuous Collector Current at 25 C 50 A