Fairchild Semiconductor FDD850N10LD View larger

Fairchild Semiconductor FDD850N10LD

Fairchild Semiconductor


MOSFET 100V, 15.7A, 75mOhm N-Channel BoostPak

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$ 1.75

90 90 Items In Stock

Specification of FDD850N10LD

Transistor Polarity N-Channel
Manufacturer Part No. FDD850N10LD
Channel Mode Enhancement
Fall Time 8 ns
Pd - Power Dissipation 42 W
Forward Transconductance - Min 31 S
Series FDD850N10L
Alternate Part No. 512-FDD850N10LD
Packaging Reel
Configuration Single
Maximum Operating Temperature + 150 C
Unit Weight 260.370 mg
Product Category MOSFET
Mounting Style SMD/SMT
Rds On - Drain-Source Resistance 75 mOhms
Vgs - Gate-Source Breakdown Voltage 20 V
Minimum Operating Temperature - 55 C
Typical Turn-Off Delay Time 27 ns
Manufacturer Fairchild Semiconductor
Qg - Gate Charge 22.2 nC
Brand Fairchild Semiconductor
Rise Time 21 ns
Id - Continuous Drain Current 15.7 A
Vds - Drain-Source Breakdown Voltage 100 V
Package/Case DPAK-4

More info

Nov 1, 2013 - FDD850N10LD Rev. C2 www.fairchildsemi.com. 1. FDD850N10LD. BoostPak (N -Channel PowerTrench. ®. MOSFET + Diode). 100 V, 15.3 A, ... [1]

FDD850N10LD. BoostPak (N-Channel PowerTrench® MOSFET + Diode) 100V, 15.3A, 75 mΩ. This N-Channel MOSFET is produced using Fairchild ... [2]

FDD850N10LD Fairchild Semiconductor MOSFET 100V, 15.7A, 75mOhm N- Channel BoostPak MOSFET Pricing and Availability. [3]

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FDD850N10LD Transistor Datasheet, FDD850N10LD Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. [5]

FDD850N10LD datasheet, FDD850N10LD circuit, FDD850N10LD data sheet : FAIRCHILD - BoostPak (N-Channel PowerTrench® MOSFET + Diode) ... [6]